HEY1011 SERIES
Self-Powered Single-Channel Isolated GaN FET Driver
With Power-ThruTM Integrated Isolated Bias Supply

Main features
- Power-ThruTM integrated isolated bias
- No high-side bootstrap
- No external secondary-side bias
- 50ns propagation delay with excellent device-to-device
matching of 5ns - Separate pull-up/ down drive output pins. Pull-down
impedance 1.0Ω. Pull-up impedance 2.8Ω - Wide supply voltage 10.5V < VDRV < 13.2V
- UVLO on primary VDRV and secondary VSEC
-
More features:
- EN enable pin with fast response
- CMTI > 100 V/ns dv/dt immunity
- Creepage distance > 8 mm
- Distance-through-insulation DTI ≥ 450 μm
- Safety Regulatory Approvals (pending)
- 5.7 kV RMS VISO per UL 1577
- 8 kV pk VIOTM maximum transient isolation voltage per VDE0884-11
- 630 V pk maximum working isolation voltage
Applications
- AC-DC and DC-DC converters –
Totem-pole PFC, Half-/Full-Bridge, LLC, SR Drive, Multi-level converters, Phase-Shifted Full-Bridge, etc. - Automotive – OBC, traction drive
- Industrial – transportation, robotics
- Grid Infrastructure – micro-inverters, solar
Package
12 pin LGA 10 x 7.66 x 2.54mm
Pin Layout

Block Diagram
