Design Resources

Questions & Answers

You will find here answers to frequently asked questions. Don't find an answer? Please contact us

• What is the base technology underlying your devices, specifically the HEY1011? Is it digital, and if so is it silicon based?

  It's mixed signal : analog & digital with efficient magnetic isolation

• Is the wafer a standard n/p wafer, or is it something like silicon on insulator?

  It's standard Silicon Psub wafer.

  CMOS.

  It is not SOI

• Is the ID DRV = 3mA typ saying that there is only 3mA input current with driving an output of 1nF at 7V and 100 kHz?

  The dynamic supply current is a function of load capacitance, supply voltage, operating frequency and operating mode.  Full characterisation testing is ongoing on these devices and is nearing completion.  The datasheet will be revised with full static and dynamic curves being published.

   

  ID DRV of 3mA was an initial design specification and can be achieved under certain operating conditions however a figure of 5 to 6mA will be more typical at 7V/100kHz/1nF.  This is the full current into the VDRV pin during operation.  

• Is the Vout/Vin relationship 1:1?

  The transfer ratio is less than 1:1 and is non linear, depending mainly on the choice of CSEC.  An upcoming version of the data sheet will publish the relationship between CSEC and the output gate drive.  Internally the secondary side UVLO is 4.8V max although there are plans to reduce this.

  The HEY1011-L12A is suitable for an external negative drive circuit as GaN systems have published.  It is on our roadmap to have a fully incorporated bipolar device which will be available in 2021.

• Do you have thermal calculations available?

  Full characterisation testing is ongoing on these devices and is nearing completion.  The datasheet will be revised with full static and dynamic curves being published.

  This will include thermal performance information.