USERS' GUIDE

HD-000214-UG-1- GaN Systems Daughter Board

 

HEY-HBDS-G-12C1- USERS'GUIDE

GaN Systems EVK Daughter Board with Hey1011 gate drivers

 

Content

Description - Quick Start Guide -  PCB Layout - Schematic - Bill of materials - Double pulse test results - Ordering Information - Disclaimer

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Description

GaN Systems have an EVK platform that consists of a motherboard and a daughter board system.

HEY-HBDS-12C1-A fig1

Figure 1: GaN Systems Universal EVK

The 650V Universal Mother Board measures 160 x 100mm.

The Heyday Integrated Circuits HEY-HBDS-G-12C1-A board is a daughter board containing two HEY1011-L12A GaN FET drivers and two GaN FETs configured in a half bridge configuration that plugs into the GaN Systems universal motherboard.

The latest data sheet for the HEY1011 can be found in our resources 

HEY-HBDS-12C1-A fig2

Figure 2: HEY-HBDS-G-12C1-A Evaluation Board

For full details of how to use the GaN Systems EVK see their users guide available at:

https://gansystems.com/gan-transistors/gs66508b-2/#board

 

 

hazard

 

DANGER

DO NOT TOUCH THE BOARD WHEN IT IS ENERGIZED AND ALLOW ALL COMPONENTS TO DISCHARGE COMPLETELY PRIOR HANDLING THE BOARD.

 HIGH VOLTAGE CAN BE EXPOSED ON THE BOARD WHEN IT IS CONNECTED TO POWER SOURCE. EVEN BRIEF CONTACT DURING OPERATION MAY RESULT IN SEVERE INJURY OR DEATH.

Please ensure that appropriate safety procedures are followed. This evaluation kit is designed for engineering evaluation in a controlled lab environment and should be handled by qualified personnel ONLY. Never leave the board operating unattended.
warning

 

WARNING

Some components can be hot during and after operation. There is NO built-in electrical or thermal protection on this evaluation kit. The operating voltage, current, and component temperature should be monitored closely during operation to prevent device damage.
ESD

 

CAUTION

This product contains parts that are susceptible to damage by electrostatic discharge (ESD). Always follow ESD prevention procedures when handling the product. 

 

Quick Start Guide

 

HEY-HBDS-12C1-A fig3

 

Figure 3: HEY-HBDS-G-12C1-A Quick Start

The HEY1011-L12A gate driver does not require a secondary side power supply nor bootstrap components. Gate drive power is transferred across the isolation barrier using our patented Power-thru technology.

 

The HEY1011-L12A requires a single primary side VDRV voltage of between 7.5V and 10V

This VDRV supply should be applied to connector J1 pin 3

 

The input gate signals can be supplied also through J1 or through connector J2 as described in the GaN Systems users guide.

  1. Apply VDRV = 8.0V
  2. Apply input gate signals, with adequate dead time, to the IN_L and IN_H inputs.
  3. Convenient test points a located on the test board as shown above. A suitable differential oscilloscope should be used to monitor the high side gate signal from VGH to VSW.

PCB Layout

HEY-HBDS-G-12C1-A

 

HEY-HBDS-12C1-A fig4

Figure 4: HEY-HBDS-G-12C1-A component placement

 

HEY-HBDS-12C1-A fig5    

Figure 5: HEY-HBDS-G-12C1-A Silkscreen

 

 HEY-HBDS-12C1-A fig6

 

Figure 6: HEY-HBDS-G-12C1-A Topside copper

 

HEY-HBDS-12C1-A fig7

Figure 7: HEY-HBDS-G-12C1-A Layer 2 copper

 

HEY-HBDS-12C1-A fig8

Figure 8: HEY-HBDS-G-12C1-A Layer 3 copper

 

HEY-HBDS-12C1-A fig9

Figure 9: HEY-HBDS-G-12C1-A Bottom side copper

 

Schematic

 

HEY-HBDS-12C1-A fig10

Figure 10: HEY-HBDS-G-12D1-C Schematic

 

 

Bill of materials

 

Item

Ref Name

Description

Manufacturer

Part Number

1

C2,C12

CAP, CER,1uF,6.3V,X5R, S0402

 

 

2

C3,C1

CAP, CER, 22nF,16V, X7R, S0402

 

 

3

C9,C10,C11,C4,C5,C6,C7,C8

CAP 100nF 1kV X7R C1812

KEMET

C1812V104KDRACTU

4

CON1,CON2,CON3

CONN, EDGE PIN, 1MM

MILL-MAX

3620-2-32-15-00-00-08-0

5

HSINK1

HSINK, 33x33x33mm, Fin, 2.1C/W

MALICO

MBH375002-33P/2.6

6

IC1,IC2

HEY1011 7.66 X10 MODULE, V03

Heyday IC

HEY1011L12-PS

7

J1

Non Polarised 6Way Header 2P54

 

 

8

J2

CONN, PTH,6POS, HDR, 2.54mm, Right Angle, Dual Row

SAMTEC

TSW-103-08-G-D-RA

9

JP1

CONN, HDR, 2WAY, SMT, PWR

KEYSTONE

5102

10

Q1,Q2

NGAN GS66508B 650V 30A

GaN Systems

GS66508B-E01-MR

11

R1,R2

RES, SMD, 10R, 0.063W, 1%, S0402

 

 

12

R3,R4

RES, SMD, 1R0, 0.063W, 1%, S0402

 

 

13

R5

RES, SMD, 100K, 0.063W, 1%, S0402

 

 

14

R7,R8

RES, SMD, 0R0, 0.063W, 1%, S0402

 

 

Table 1: Bill of materials

 

Double Pulse Test Results

 

HEY-HBDS-12C1-A fig11

Fig 11: HEY-HBDS-G-12C1-A Test set up

 

HEY-HBDS-12C1-A fig12

CH1(Red): Low side Vgs (1Ghz BW)
CH2(Grn): Switch Node (500MHz BW)
CH3(Blk): Inductor current (1A/V)
Overview Vin = 400V

 

 

DPT: RPU/RPD = 10R/1R

HEY-HBDS-12C1-A fig13a

CH1(Red): Low side Vgs (1Ghz BW)
CH2(Grn): Switch Node (500MHz BW)
CH3(Blk): Inductor current (1A/V)

HEY-HBDS-12C1-A fig13b

CH1(Red): Low side Vgs (1Ghz BW)
CH2(Grn): Switch Node (500MHz BW)
CH3(Blk): Inductor current (1A/V)
Vin = 400V Vin = 400V

 

 

Ordering information

Please visit our online store

 

Disclaimer

Heyday Integrated Circuits (“Heyday”) provides all data in any resource and in any format such as, but not limited to datasheets, reference designs, application notes, web tools and safety information “as is” and with all faults, and disclaims any type of warranties, fitness for a particular purpose or non-infringement of 3rd party intellectual property rights. Any examples described herein are for illustrative purposes only and are intended to provide customers with the latest, accurate, and in-depth documentation regarding Heyday products and their potential applications. These resources are subject to change without notice. Heyday allows you to use these resources only for development of an application that uses the Heyday product(s) described in the resource. Other reproduction and display of these resources is prohibited. Heyday shall have no liability for the consequences of use of the information supplied herein.

 

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